News & Events

Oak Ridge National Lab and Hinds Instruments Sign CRADA

Hillsboro, Oregon, September 26, 2012 – Hinds Instruments and Oak Ridge National Lab (ORNL) announced today that work has begun on a new Cooperative Research and Development Agreement (CRADA). CRADA No. NFE-12-04041 will focus the technology resources of both partners to further develop and refine the 2-MGEM Optical Anisotropy Factor Measurement System. The 2-MGEM system…

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Hinds Instruments Announces Installation of GEN6 Exicor® with Auto-Tilt feature for FPD Birefringence Measurement at Global Flat Panel Display Manufacturer

Hillsboro, Oregon, July 27, 2012 – Hinds Instruments, Inc., a leading supplier of polarization measurement technology, installed the latest version of its Exicor® GEN6 Birefringence Measurement System at a major global customer in Japan last quarter. This new system, which was delivered and installed within a narrow window in the customers’ construction schedule, was supplied…

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Hinds Instruments Announces Installation of Next Generation Exicor® OIA Birefringence Measurement System

Hillsboro, Oregon, April 18, 2012 – Hinds Instruments, Inc., a leading supplier of polarization measurement technology, today announced it has shipped the latest version of its Exicor® OIA™ – Oblique Incident Angle Birefringence Measurement System to a major global customer for measuring low level birefringence.  Designed for advanced characterization of planar and curved surface optics…

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Hinds Photoelastic Modulators with Advanced Thermal Control

Hinds Instruments, Inc. announces the PEM-ATCTM, a photoelastic modulator with advanced thermal control. This new PEM design offers long term stability and freedom from drift caused by ambient temperature variations. The PEM-ATC is equipped with a proprietary PID controller, internal heating and a temperature sensor. Through the use of heater operated PID feedback control, the…

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Residual Stress Birefringence in Optical Materials

Understanding birefringence provides a roadmap for improving the quality of optical parts. By Douglas C. Mark, Hinds Instruments, Inc. Summary: Understanding the residual stress birefringence characteristics of both individual components and bulk materials is critical for researchers, quality control professionals and factory managers responsible for products ranging from precision optics to high volume consumer devices….

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SCHOTT and Hinds Instruments collaborate to study polarization artifacts in PV solar wafer materials

Hillsboro, Oregon, November 1, 2011 – Hinds Instruments, a leading global supplier of photoelastic modulators (PEMs), Birefringence measurement systems and polarization analysis equipment, along with SCHOTT Solar Wafer GmbH announced today that they have begun a system development project to study polarization characteristic and stress birefringence in Silicon wafers and PV related materials. Hinds is…

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Hinds Instruments Celebrates 40 Years

Many things have changed since we opened our doors 40 years ago. But one thing hasn’t changed: Your need for state-of-the-art polarization measurement solutions. From the research lab to the factory floor, in applications as diverse as chiral analysis and LCD glass measurement, Hinds Instruments has solved some of the toughest problems in polarization measurement…

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Use of PEMs in Magneto Optic Kerr Effect Experiments

Do you need to measure magneto-optic effects? Are you working with magnetic thin film storage materials? Hinds Instruments provides two solutions: a component-based build-it-yourself package and a full turnkey system. Both of these are based on Hinds’ Instruments Photoelastic Modulator (PEM) technology. Hinds PEMs provide increased sensitivity for MOKE measurements. In addition, Hinds Signaloc lock-in amplifiers (LIAs) and photodiode detectors (DETs)…

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Hinds Instruments and New York University Lab collaborate on GOALI grant

NYU and Hinds collaborate to develop a Mueller matrix polarimeter for chiroptical spectroscopy of crystals. Hillsboro, Oregon, September 20, 2011 – Hinds Instruments, a leading global supplier of photoelastic modulators (PEMs), along with New York University today announced the awarding of an NSF-sponsored Grant Opportunity for Academic Liason with Industry (GOALI). The grant is entitled,…

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Hinds Instruments Signaloc™ 2100 Lock-in Amplifiers match the sensitivity of popular commercially available lock-ins.

The Signaloc 2100 Lock-In Amplifier (LIA) was originally designed for demodulation of PEM signals in Hinds’ internally developed Exicor® line of high performance birefringence measurement instrumentation. The goal was to match the sensitivity of popular commercially available lock-in amplifiers while minimizing extraneous functions to keep the cost down. The resulting Signaloc lock-in amplifier exceeded all…

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Hinds Instruments Announces Next-Generation Photodiode Detector Family

Hillsboro, Oregon, September 8, 2010 – Hinds Instruments announces the release of a new generation photodiode detector family, the DET-200 series. Used in labs worldwide, Hinds’ detection systems are specifically designed for use with optical signals from DC to 1MHz over a spectral range of 200 to 1600 nm.  DET-200 technology represents a significant improvement…

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My PEM is not providing stable retardation and/or there is noise if I look at my signal on an oscilloscope. What could be wrong?

There are several possibilities. A list of questions to begin troubleshooting is: What is your optical and electronic setup? What is the light source you are using and the wavelength or wavelengths (in particular, are you using a laser)? What detector are you using? When the PEM is operating, is the limit light off, on…

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What is the difference between photoconductive and photovoltaic detectors?

The difference between these two classifications is that photoconductive detectors use the increase in electrical conductivity resulting from increases in the number of free carriers generated when photons are absorbed (generation of current), whereas photovoltaic current is generated as a result of the absorption of photons of a voltage difference across a p-n junction (generation…

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